DI115N06PQ
MOSFETs (Field Effect Transistors)

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI115N06PQ
MOSFET, PowerQFN 5x6, N, 60V, 115A, 25mΩ, 175°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

Distributor Availability

Technical data

Article number DI115N06PQ
DI115N06PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 60 V
Drain Current 25°C ID 115.000 A
On-Resistance 1 RDSon1 0.0025
@ ID 30.000 A
@ VGS 10 V
Drain Current 100°C ID
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 78.900 W
@ TLoc
Location
Avalanche No
Peak Drain Current IDM 480.000 A
Threshold Voltage VGSth min
VGSth max 2.5 V
Turn-On Delay Time tD(on)
Rise Time tr
Turn-Off Delay Time tD(off)
Fall Time tf
Total Gate Charge (10V) Qg (10V)
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd
Single pulse avalanche energy Eas
Input Capacitance Ciss
Output Capacitance Coss
Reverse Transfer Capacitance Crss
Reverse recovery charge Qrr

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