DI110N15PQ-Q
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI110N15PQ-Q
MOSFET, PowerQFN 5x6, N, 150V, 110A, 11.7mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI110N15PQ-Q
DI110N15PQ-Q Single
Type SMD
Package PowerQFN 5x6
Qualification AEC-Q compliant
Config Single
Life Cycle engineering sample
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 150 V
Drain Current 25°C ID 110.000 A
On-Resistance 1 RDSon1 0.0117 Ω
@ ID 20 A
@ VGS 10 V
Drain Current 100°C ID 34.000 A
On-Resistance 2 RDSon2 0.0150 Ω
@ ID 20.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 62.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 145.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 25 ns
Rise Time tr 15 ns
Turn-Off Delay Time tD(off) 23 ns
Fall Time tf 6 ns
Total Gate Charge (10V) Qg (10V) 69.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 4 nC
Single pulse avalanche energy Eas 158.0 mJ
Input Capacitance Ciss 3700 pF
Output Capacitance Coss 350 pF
Reverse Transfer Capacitance Crss 30 pF
Reverse recovery charge Qrr 140 nC

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