DI110N06D1
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI110N06D1
MOSFET, DPAK, N, 65V, 110A, 3.2mΩ, 150°C
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI110N06D1
DI110N06D1 Single
Type SMD
Package TO-252AA/D-PAK
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 65 V
Drain Current 25°C ID 110.000 A
On-Resistance 1 RDSon1 0.0032 Ω
@ ID 30 A
@ VGS 10 V
Drain Current 100°C ID 70.000 A
On-Resistance 2 RDSon2 0.0045 Ω
@ ID 20.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 71.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 550.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 27 ns
Rise Time tr 38 ns
Turn-Off Delay Time tD(off) 25 ns
Fall Time tf 6 ns
Total Gate Charge (10V) Qg (10V) 75.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 17 nC
Single pulse avalanche energy Eas 180.0 mJ
Input Capacitance Ciss 4211 pF
Output Capacitance Coss 1303 pF
Reverse Transfer Capacitance Crss 34 pF
Reverse recovery charge Qrr 36 nC

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