DI110N04PQ-AQ
MOSFETs (Field Effect Transistors)

Downloads & Links
Technical data
Related products
News and Updates
Application Reference Diagrams
Request sample

Stock

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI110N04PQ-AQ
MOSFET, PowerQFN 5x6, N, 40V, 100A, 2.5mΩ, 175°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

Downloads & Links

Distributor Availability

Technical data

Article number DI110N04PQ-AQ
DI110N04PQ-AQ Single
Type SMD
Package PowerQFN 5x6
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 40 V
Drain Current 25°C ID 100.000 A
On-Resistance 1 RDSon1 0.0025 Ω
@ ID 23 A
@ VGS 10 V
Drain Current 100°C ID 70.000 A
On-Resistance 2 RDSon2 0.0038 Ω
@ ID 18.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 55.500 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 450.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 19 ns
Rise Time tr 42 ns
Turn-Off Delay Time tD(off) 17 ns
Fall Time tf 7 ns
Total Gate Charge (10V) Qg (10V) 48.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 7 nC
Single pulse avalanche energy Eas 123.5 mJ
Input Capacitance Ciss 2980 pF
Output Capacitance Coss 550 pF
Reverse Transfer Capacitance Crss 35 pF
Reverse recovery charge Qrr 18 nC

News and Updates

  • Filter:

Request sample