DI101N10PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI101N10PQ
MOSFET, PowerQFN 5x6, N, 100V, 100A
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI101N10PQ
DI101N10PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 100 V
Drain Current 25°C ID 100.000 A
On-Resistance 1 RDSon1 0.0000 Ω
@ ID 0.000 A
@ VGS 0 V
Drain Current 100°C ID 75.000 A
On-Resistance 2 RDSon2 0.0080 Ω
@ ID 30.000 A
@ VGS 10 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 130.000 W
@ TLoc
Location
Avalanche Avalanche No
Peak Drain Current IDM 240.000 A
Threshold Voltage VGSth min
VGSth max 2.5 V
Turn-On Delay Time tD(on)
Rise Time tr
Turn-Off Delay Time tD(off)
Fall Time tf
Total Gate Charge (10V) Qg (10V)
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd
Single pulse avalanche energy Eas
Input Capacitance Ciss
Output Capacitance Coss
Reverse Transfer Capacitance Crss
Reverse recovery charge Qrr

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