DI100P06D1K
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI100P06D1K Gate Protected
MOSFET, DPAK, P, -60V, -100A, 6.5mΩ, 150°C
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free Yes

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Technical data

Article number DI100P06D1K
DI100P06D1K Single Protected
Type SMD
Package TO-252AA/D-PAK
Qualification Industrial Grade
Config Single Protected
Life Cycle engineering sample
ESD sensitive Yes
MSL 3
 
ESD protection ESD protected Yes
Polarity pol P
Drain source voltage VDS 65 V
Drain current 25°C ID -100.000 A
On-resistance 1 RDSon1 0.00650 Ω
@ ID 15.000 A
@ VGS 10 V
Drain current 100°C ID -63.000 A
On-resistance 2 RDSon2 0.00000 Ω
@ ID 0.000 A
@ VGS 0 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 160.000 W
@ TLoc 25 °C
Location
Avalanche Yes
Peak drain current IDM -400.000 A
Threshold voltage VGSth min -1.5 V
VGSth max -2.5 V
Turn-on delay time tD(on) 19 ns
Rise time tr 46 ns
Turn-off delay time tD(off) 73 ns
Fall time tf 51 ns
Total gate charge (10V) Qg (10V) 70.0 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 11 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 5608 pF
Output capacitance Coss 931 pF
Reverse transfer capacitance Crss 42 pF
Reverse recovery charge Qrr 0.0 nC

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