DI100P04PQ-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI100P04PQ-AQ
MOSFET, PowerQFN 5x6, P, -40V, -100A, 3.8mΩ, 175°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI100P04PQ-AQ
DI100P04PQ-AQ Single
Type SMD
Package PowerQFN 5x6
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol P
Drain Source Voltage VDS -40 V
Drain Current 25°C ID -70.000 A
On-Resistance 1 RDSon1 0.0038 Ω
@ ID -20.000 A
@ VGS -10 V
Drain Current 100°C ID -70.000 A
On-Resistance 2 RDSon2 0.0055 Ω
@ ID -10.000 A
@ VGS -4.5 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 50.000 W
@ TLoc 25 °C
Location Terminal
Avalanche Yes
Peak Drain Current IDM -400.000 A
Threshold Voltage VGSth min -1 V
VGSth max -2.2 V
Turn-On Delay Time tD(on) 13 ns
Rise Time tr 78 ns
Turn-Off Delay Time tD(off) 194 ns
Fall Time tf 110 ns
Total Gate Charge (10V) Qg (10V) 118.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 27 nC
Single pulse avalanche energy Eas 272.0 mJ
Input Capacitance Ciss 5705 pF
Output Capacitance Coss 654 pF
Reverse Transfer Capacitance Crss 555 pF
Reverse recovery charge Qrr 15 nC

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