DI100N10PQ-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI100N10PQ-AQ
MOSFET, PowerQFN 5x6, N, 100V, 80A, 4.5mΩ, 175°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI100N10PQ-AQ
DI100N10PQ-AQ Single
Type SMD
Package PowerQFN 5x6
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 100 V
Drain Current 25°C ID 80.000 A
On-Resistance 1 RDSon1 0.0045 Ω
@ ID 50 A
@ VGS 10 V
Drain Current 100°C ID 50.000 A
On-Resistance 2 RDSon2 0.0066 Ω
@ ID 20.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 60.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 480.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.4 V
Turn-On Delay Time tD(on) 26 ns
Rise Time tr 43 ns
Turn-Off Delay Time tD(off) 23 ns
Fall Time tf 8 ns
Total Gate Charge (10V) Qg (10V) 75.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 12 nC
Single pulse avalanche energy Eas 144.0 mJ
Input Capacitance Ciss 3742 pF
Output Capacitance Coss 698 pF
Reverse Transfer Capacitance Crss 34 pF
Reverse recovery charge Qrr 48 nC

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