DI075N06PQ-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI075N06PQ-AQ
MOSFET, PowerQFN 5x6, N, 60V, 75A, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI075N06PQ-AQ
DI075N06PQ-AQ Single
Type SMD
Package PowerQFN 5x6
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 60 V
Drain current 25°C ID 75 A
On-resistance 1 RDSon1 0.0098 Ω
@ ID 20 A
@ VGS 4.5 V
Drain current 100°C ID 53 A
On-resistance 2 RDSon2 0.006 Ω
@ ID 20 A
@ VGS 10 V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 39 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM 300 A
@ tp 10000 µs
Threshold voltage VGSth min 1.3 V
VGSth max 2.3 V
Turn-on delay time tD(on) 14.6 ns
Rise time tr 26 ns
Turn-off delay time tD(off) 13.6 ns
Fall time tf 3 ns
Total gate charge (10V) Qg (10V) 35 nC
Total gate charge (4.5V) Qg (4.5V) 18 nC
Gate-drain charge Qgd 9 nC
Single pulse avalanche energy Eas 49.6 mJ
Input capacitance Ciss 1755 pF
Output capacitance Coss 746 pF
Reverse transfer capacitance Crss 49 pF
Reverse recovery charge Qrr 36.5 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 2.7 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 50 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 60 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 33 mA/V
Intrinsic gate resistance RGi 786 Ω

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