DI068P04D1-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI068P04D1-AQ
MOSFET, DPAK, P, -40V, -68A, 7.3mΩ, 175°C, AEC-Q101
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI068P04D1-AQ
DI068P04D1-AQ Single
Type SMD
Package TO-252AA/D-PAK
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol P
Drain Source Voltage VDS -40 V
Drain Current 25°C ID -68.000 A
On-Resistance 1 RDSon1 0.0073 Ω
@ ID -20 A
@ VGS -10 V
Drain Current 100°C ID -50.000 A
On-Resistance 2 RDSon2 0.0105 Ω
@ ID -10.000 A
@ VGS -4.5 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 65.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM -300.000 A
Threshold Voltage VGSth min -1 V
VGSth max -2.5 V
Turn-On Delay Time tD(on) 37 ns
Rise Time tr 48 ns
Turn-Off Delay Time tD(off) 43 ns
Fall Time tf 9 ns
Total Gate Charge (10V) Qg (10V) 125.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 19 nC
Single pulse avalanche energy Eas 101.0 mJ
Input Capacitance Ciss 7560 pF
Output Capacitance Coss 521 pF
Reverse Transfer Capacitance Crss 344 pF
Reverse recovery charge Qrr 16 nC

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