DI064N20D2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI064N20D2
MOSFET, D2PAK, N, 200V, 64A, 25 mΩ, 150°C
Minimum order quantity 800
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI064N20D2
DI064N20D2 Single
Type SMD
Package TO-263AB/D2PAK
Qualification Commercial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 200 V
Drain current 25°C ID 64.000 A
On-resistance 1 RDSon1 0.0250 Ω
@ ID 40.000 A
@ VGS 10 V
Drain current 100°C ID 40.000 A
On-resistance 2 RDSon2 0.0000 Ω
@ ID 0.000 A
@ VGS 0 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 227.000 W
@ TLoc 25 °C
Location
Avalanche Yes
Peak drain current IDM 240.000 A
Threshold voltage VGSth min 3.0 V
VGSth max 5.0 V
Turn-on delay time tD(on) 31 ns
Rise time tr 60 ns
Turn-off delay time tD(off) 19 ns
Fall time tf 9 ns
Total gate charge (10V) Qg (10V) 72.0 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 23 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 4077 pF
Output capacitance Coss 240 pF
Reverse transfer capacitance Crss 22 pF
Reverse recovery charge Qrr 505 nC

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