DI060N06PQ-Q
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI060N06PQ-Q
MOSFET, PowerQFN 5x6, N, 60V, 60A, 7mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH not declarable
Lead free No
Halogen free Yes

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Technical data

Article number DI060N06PQ-Q
DI060N06PQ-Q Single
Type SMD
Package PowerQFN 5x6
Qualification AEC-Q compliant
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 60 V
Drain Current 25°C ID 60.000 A
On-Resistance 1 RDSon1 0.0070 Ω
@ ID 20 A
@ VGS 10 V
Drain Current 100°C ID 43.000 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 70.000 W
@ TLoc
Location
Avalanche Yes
Peak Drain Current IDM 170.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on) 8 ns
Rise Time tr 2 ns
Turn-Off Delay Time tD(off) 29 ns
Fall Time tf 4 ns
Total Gate Charge (10V) Qg (10V) 27.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 10 nC
Single pulse avalanche energy Eas 320.0 mJ
Input Capacitance Ciss 1700 pF
Output Capacitance Coss 345 pF
Reverse Transfer Capacitance Crss 8 pF
Reverse recovery charge Qrr 48 nC

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