DI057N08PT-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI057N08PT-AQ
MOSFET, PowerQFN 3x3, N, 80V, 57A, 7mΩ, 175°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI057N08PT-AQ
DI057N08PT-AQ Single
Type SMD
Package PowerQFN 3x3
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 80 V
Drain Current 25°C ID 57.000 A
On-Resistance 1 RDSon1 0.0070 Ω
@ ID 20.000 A
@ VGS 10 V
Drain Current 100°C ID 40.000 A
On-Resistance 2 RDSon2 0.0090 Ω
@ ID 10.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 41.600 W
@ TLoc 25 °C
Location
Avalanche Yes
Peak Drain Current IDM 252.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 14 ns
Rise Time tr 24 ns
Turn-Off Delay Time tD(off) 14 ns
Fall Time tf 4 ns
Total Gate Charge (10V) Qg (10V) 33.0 nC
Total Gate Charge (4.5V) Qg (4.5V) 17.0 nC
Gate-Drain Charge Qgd 9 nC
Single pulse avalanche energy Eas 12.8 mJ
Input Capacitance Ciss 1635 pF
Output Capacitance Coss 590 pF
Reverse Transfer Capacitance Crss 18 pF
Reverse recovery charge Qrr 34 nC

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