DI057N04PQ-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI057N04PQ-AQ
MOSFET, PowerQFN 5x6, N, 40V, 57A, 6.4mΩ, 175°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI057N04PQ-AQ
DI057N04PQ-AQ Single
Type SMD
Package PowerQFN 5x6
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 40 V
Drain Current 25°C ID 57.000 A
On-Resistance 1 RDSon1 0.0064 Ω
@ ID 20.000 A
@ VGS 10 V
Drain Current 100°C ID 40.000 A
On-Resistance 2 RDSon2 0.0085 Ω
@ ID 20.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 34.000 W
@ TLoc 25 °C
Location
Avalanche No
Peak Drain Current IDM 220.000 A
Threshold Voltage VGSth min 1.0 V
VGSth max 2.0 V
Turn-On Delay Time tD(on) 9 ns
Rise Time tr 43 ns
Turn-Off Delay Time tD(off) 9 ns
Fall Time tf 7 ns
Total Gate Charge (10V) Qg (10V) 14.0 nC
Total Gate Charge (4.5V) Qg (4.5V) 7.0 nC
Gate-Drain Charge Qgd 3 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 715 pF
Output Capacitance Coss 230 pF
Reverse Transfer Capacitance Crss 17 pF
Reverse recovery charge Qrr 9 nC

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