DI056N10D2-Q
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI056N10D2-Q
MOSFET, D2PAK, N, 100V, 56A
Minimum order quantity 800
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI056N10D2-Q
DI056N10D2-Q Single
Type SMD
Package TO-263AB/D2PAK
Qualification AEC-Q compliant
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 100 V
Drain Current 25°C ID 56.000 A
On-Resistance 1 RDSon1 0.0095 Ω
@ ID 15.000 A
@ VGS 10 V
Drain Current 100°C ID 34.000 A
On-Resistance 2 RDSon2 0.0130 Ω
@ ID 10.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 57.600 W
@ TLoc
Location
Avalanche Yes
Peak Drain Current IDM 200.000 A
Threshold Voltage VGSth min 1.5 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 15 ns
Rise Time tr 16 ns
Turn-Off Delay Time tD(off) 15 ns
Fall Time tf 4 ns
Total Gate Charge (10V) Qg (10V) 38.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 11 nC
Single pulse avalanche energy Eas 70.5 mJ
Input Capacitance Ciss 1685 pF
Output Capacitance Coss 307 pF
Reverse Transfer Capacitance Crss 24 pF
Reverse recovery charge Qrr 38 nC

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