DI050P04D1
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI050P04D1
MOSFET, DPAK, P, -40V, -50A, 10.5mΩ, 150°C
Minimum order quantity 10.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI050P04D1
DI050P04D1 Single
Type SMD
Package TO-252AA/D-PAK
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS -40 V
Drain current 25°C ID -50.000 A
On-resistance 1 RDSon1 0.0150 Ω
@ ID -12.000 A
@ VGS -4.5 V
Drain current 100°C ID -31.000 A
On-resistance 2 RDSon2 0.0105 Ω
@ ID -16.000 A
@ VGS -10 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 55.000 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM -200.000 A
Threshold voltage VGSth min -1 V
VGSth max -2.5 V
Turn-on delay time tD(on) 42 ns
Rise time tr 34 ns
Turn-off delay time tD(off) 84 ns
Fall time tf 9 ns
Total gate charge (10V) Qg (10V) 0.0 nC
Total gate charge (4.5V) Qg (4.5V) 27.0 nC
Gate-drain charge Qgd 7 nC
Single pulse avalanche energy Eas 51.0 mJ
Input capacitance Ciss 3025 pF
Output capacitance Coss 285 pF
Reverse transfer capacitance Crss 182 pF
Reverse recovery charge Qrr 0 nC

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