DI050N06D1-Q
MOSFETs (Field Effect Transistors)
Product information
| Product family | MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection |
|---|---|
| Article description |
DI050N06D1-Q
MOSFET, DPAK, N, 60V, 50A, 8.5mΩ, 150°C |
| Minimum order quantity | 2.500 |
| Stock | 0 |
| Customs Tariff Number | 85412900 |
| RoHS | compliant with exemption 7(a)-I |
| REACH | declarable |
| Lead free | No |
| Halogen free | No |
Downloads & Links
Distributor Availability
Technical data
| Article number | DI050N06D1-Q | |
|---|---|---|
|
||
| Type | SMD | |
| Package | TO-252AA/D-PAK | |
| Qualification | AEC-Q compliant | |
| Config | Single | |
| Life Cycle | active | |
| ESD sensitive | No | |
| MSL | 3 | |
| ESD protection | ESD protected | No |
| Polarity | pol | N |
| Drain source voltage | VDS | 60 V |
| Drain current 25°C | ID | 50.000 A |
| On-resistance 1 | RDSon1 | 0.0160 Ω |
| @ ID | 8.000 A | |
| @ VGS | 4.5 V | |
| Drain current 100°C | ID | 30.000 A |
| On-resistance 2 | RDSon2 | 0.0085 Ω |
| @ ID | 10.000 A | |
| @ VGS | 10 V | |
| Junction temperature | Tjmin | |
| Tjmax | 150 °C | |
| Power dissipation | Ptot | 42.000 W |
| @ TLoc | ||
| Location | ||
| Avalanche | Yes | |
| Peak drain current | IDM | 160.000 A |
| @ tp | ||
| Threshold voltage | VGSth min | 1.2 V |
| VGSth max | 2.5 V | |
| Turn-on delay time | tD(on) | 10 ns |
| Rise time | tr | 16 ns |
| Turn-off delay time | tD(off) | 9 ns |
| Fall time | tf | 2 ns |
| Total gate charge (10V) | Qg (10V) | 14.0 nC |
| Total gate charge (4.5V) | Qg (4.5V) | |
| Gate-drain charge | Qgd | 3 nC |
| Single pulse avalanche energy | Eas | 36.0 mJ |
| Input capacitance | Ciss | 825 pF |
| Output capacitance | Coss | 290 pF |
| Reverse transfer capacitance | Crss | 15 pF |
| Reverse recovery charge | Qrr | 7 nC |
| Case flammability | UL94-V0 | No |
| Net weight | mnet | |
| Marking | Marking | |
| Thermal resistance junction | RTH | |
| Location | ||
| UL recognized | UL-Recognition | |
| Thermal resistance junction (b) | RTH | |
| Location | ||
| Storage temperature | Tsmin | |
| Tsmax | ||
| Solder & Assembly | Solder & Assembly | |
| Gate source leakage current | IGSS | |
| @ VGS | ||
| Drain source leakage current | IDSS | |
| @ VDS | ||
| Gate source voltage DC | VGSS | |
| Gate source voltage ESD | VGSS | |
| Forward transconductance | gfs | |
| Intrinsic gate resistance | RGi | |
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