DI049N06PTK
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI049N06PTK Gate protected
MOSFET, PowerQFN 3x3, N, 65V, 49A, 6.1mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI049N06PTK
DI049N06PTK Single Protected
Type SMD
Package PowerQFN 3x3
Qualification Industrial Grade
Config Single Protected
Life Cycle engineering sample
ESD sensitive No
 
ESD protection ESD protected Yes
Polarity pol N
Drain Source Voltage VDS 65 V
Drain Current 25°C ID 49.000 A
On-Resistance 1 RDSon1 0.0061 Ω
@ ID 20 A
@ VGS 10 V
Drain Current 100°C ID 32.000 A
On-Resistance 2 RDSon2 0.0100 Ω
@ ID 10.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 25.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 300.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 25.0 V
Turn-On Delay Time tD(on) 14 ns
Rise Time tr 3 ns
Turn-Off Delay Time tD(off) 13 ns
Fall Time tf 16 ns
Total Gate Charge (10V) Qg (10V) 31.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 8 nC
Single pulse avalanche energy Eas 4.1 mJ
Input Capacitance Ciss 1691 pF
Output Capacitance Coss 604 pF
Reverse Transfer Capacitance Crss 37 pF
Reverse recovery charge Qrr 8 nC

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