DI048N08PQ-Q
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI048N08PQ-Q
MOSFET, PowerQFN 5x6, N, 80V, 48A, 6.5mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS
REACH
Lead free No
Halogen free No

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Technical data

Article number DI048N08PQ-Q
DI048N08PQ-Q Single
Type SMD
Package PowerQFN 5x6
Qualification AEC-Q compliant
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 80 V
Drain Current 25°C ID 48.000 A
On-Resistance 1 RDSon1 0.0065 Ω
@ ID 20 A
@ VGS 10 V
Drain Current 100°C ID 42.500 A
On-Resistance 2 RDSon2 0.0085 Ω
@ ID 20.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 56.800 W
@ TLoc
Location
Avalanche Yes
Peak Drain Current IDM 120.000 A
Threshold Voltage VGSth min 1.3 V
VGSth max 2.3 V
Turn-On Delay Time tD(on) 8 ns
Rise Time tr 21 ns
Turn-Off Delay Time tD(off) 19 ns
Fall Time tf 45 ns
Total Gate Charge (10V) Qg (10V) 35.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 7 nC
Single pulse avalanche energy Eas 25.6 mJ
Input Capacitance Ciss 1812 pF
Output Capacitance Coss 903 pF
Reverse Transfer Capacitance Crss 53 pF
Reverse recovery charge Qrr 45 nC

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