DI048N04PQ2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI048N04PQ2
MOSFET, PowerQFN 5x6-Dual, N+N, 40V, 48A, 8mΩ, 175°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI048N04PQ2
DI048N04PQ2 Dual
Type SMD
Package PowerQFN 5x6-Dual
Qualification Industrial Grade
Config Dual
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N+N
Drain Source Voltage VDS 40 V
Drain Current 25°C ID 48.000 A
On-Resistance 1 RDSon1 0.0080 Ω
@ ID 12 A
@ VGS 10 V
Drain Current 100°C ID 30.000 A
On-Resistance 2 RDSon2 0.0115 Ω
@ ID 10.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 28.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 200.000 A
Threshold Voltage VGSth min 1.0 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 17 ns
Rise Time tr 30 ns
Turn-Off Delay Time tD(off) 17 ns
Fall Time tf 2 ns
Total Gate Charge (10V) Qg (10V) 48.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 9 nC
Single pulse avalanche energy Eas 45.0 mJ
Input Capacitance Ciss 2270 pF
Output Capacitance Coss 170 pF
Reverse Transfer Capacitance Crss 120 pF
Reverse recovery charge Qrr 6 nC

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