DI048N04PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI048N04PQ
MOSFET, PowerQFN 5x6, N, 40V, 48A, 8mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI048N04PQ
DI048N04PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 40 V
Drain Current 25°C ID 48.000 A
On-Resistance 1 RDSon1 0.0080 Ω
@ ID 12 A
@ VGS 10 V
Drain Current 100°C ID 30.000 A
On-Resistance 2 RDSon2 9.5000 Ω
@ ID 10.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 28.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 200.000 A
Threshold Voltage VGSth min 1.0 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 17 ns
Rise Time tr 30 ns
Turn-Off Delay Time tD(off) 17 ns
Fall Time tf 2 ns
Total Gate Charge (10V) Qg (10V) 48.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 9 nC
Single pulse avalanche energy Eas 33.0 mJ
Input Capacitance Ciss 2270 pF
Output Capacitance Coss 170 pF
Reverse Transfer Capacitance Crss 120 pF
Reverse recovery charge Qrr 6 nC

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