DI040N10D1
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI040N10D1
MOSFET, DPAK, N, 100V, 40A, 15mΩ, 175°C
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI040N10D1
DI040N10D1 Single
Type SMD
Package TO-252AA/D-PAK
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 100 V
Drain Current 25°C ID 40.000 A
On-Resistance 1 RDSon1 0.0150 Ω
@ ID 28 A
@ VGS 10 V
Drain Current 100°C ID 40.000 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 140.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 160.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on) 15 ns
Rise Time tr 11 ns
Turn-Off Delay Time tD(off) 52 ns
Fall Time tf 13 ns
Total Gate Charge (10V) Qg (10V) 94.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 24 nC
Single pulse avalanche energy Eas 520.0 mJ
Input Capacitance Ciss 3400 pF
Output Capacitance Coss 290 pF
Reverse Transfer Capacitance Crss 224 pF
Reverse recovery charge Qrr 54 nC

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