DI035N10PT
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI035N10PT
MOSFET, PowerQFN 3x3, N, 100V, 35A, 14mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI035N10PT
DI035N10PT Single
Type SMD
Package PowerQFN 3x3
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 100 V
Drain Current 25°C ID 35.000 A
On-Resistance 1 RDSon1 0.0140 Ω
@ ID 7 A
@ VGS 10 V
Drain Current 100°C ID 22.000 A
On-Resistance 2 RDSon2 0.0235 Ω
@ ID 5.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 25.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 130.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 13 ns
Rise Time tr 8 ns
Turn-Off Delay Time tD(off) 12 ns
Fall Time tf 5 ns
Total Gate Charge (10V) Qg (10V) 22.0 nC
Total Gate Charge (4.5V) Qg (4.5V) 12.0 nC
Gate-Drain Charge Qgd 7 nC
Single pulse avalanche energy Eas 29.0 mJ
Input Capacitance Ciss 1220 pF
Output Capacitance Coss 730 pF
Reverse Transfer Capacitance Crss 195 pF
Reverse recovery charge Qrr 34 nC

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