DI025N25PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI025N25PQ
MOSFET, PowerQFN 5x6, N, 250V, 25A, 80mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH not declarable
Lead free No
Halogen free Yes

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Technical data

Article number DI025N25PQ
DI025N25PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 250 V
Drain current 25°C ID 25.000 A
On-resistance 1 RDSon1 0.0800 Ω
@ ID 20 A
@ VGS 10 V
Drain current 100°C ID 17.500 A
On-resistance 2 RDSon2
@ ID
@ VGS
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 140.000 W
@ TLoc
Location
Avalanche Yes
Peak drain current IDM 100.000 A
@ tp
Threshold voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-on delay time tD(on) 7 ns
Rise time tr 10 ns
Turn-off delay time tD(off) 25 ns
Fall time tf 5 ns
Total gate charge (10V) Qg (10V) 24.0 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 6 nC
Single pulse avalanche energy Eas 320.0 mJ
Input capacitance Ciss 1550 pF
Output capacitance Coss 97 pF
Reverse transfer capacitance Crss 5 pF
Reverse recovery charge Qrr 160 nC
Case flammability UL94-V0 No
Net weight mnet
Marking Marking
Thermal resistance junction RTH
Location
UL recognized UL-Recognition
Thermal resistance junction (b) RTH
Location
Storage temperature Tsmin
Tsmax
Solder & Assembly Solder & Assembly
Gate source leakage current IGSS
@ VGS
Drain source leakage current IDSS
@ VDS
Gate source voltage DC VGSS
Gate source voltage ESD VGSS
Forward transconductance gfs
Intrinsic gate resistance RGi

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