DI025N06PT-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI025N06PT-AQ
MOSFET, PowerQFN 3x3, N, 65V, 25A, 20mΩ, 150°C, AEC-Q101
Minimum order quantity 5.000
Stock 25.000
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI025N06PT-AQ
DI025N06PT-AQ Single
Type SMD
Package PowerQFN 3x3
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 65 V
Drain current 25°C ID 25.000 A
On-resistance 1 RDSon1 0.0200 Ω
@ ID 8 A
@ VGS 10 V
Drain current 100°C ID 15.000 A
On-resistance 2 RDSon2 0.0300 Ω
@ ID 5.000 A
@ VGS 4.5 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 25.000 W
@ TLoc
Location
Avalanche Yes
Peak drain current IDM 80.000 A
Threshold voltage VGSth min 1.4 V
VGSth max 2.5 V
Turn-on delay time tD(on) 6 ns
Rise time tr 7 ns
Turn-off delay time tD(off) 6 ns
Fall time tf 1 ns
Total gate charge (10V) Qg (10V) 9.0 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 3 nC
Single pulse avalanche energy Eas 4.3 mJ
Input capacitance Ciss 406 pF
Output capacitance Coss 147 pF
Reverse transfer capacitance Crss 18 pF
Reverse recovery charge Qrr 4 nC

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