DI025N06PT-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI025N06PT-AQ
MOSFET, PowerQFN 3x3, N, 65V, 25A, 20mΩ, 150°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI025N06PT-AQ
DI025N06PT-AQ Single
Type SMD
Package PowerQFN 3x3
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 65 V
Drain Current 25°C ID 25.000 A
On-Resistance 1 RDSon1 0.0200 Ω
@ ID 8 A
@ VGS 10 V
Drain Current 100°C ID 15.000 A
On-Resistance 2 RDSon2 0.0300 Ω
@ ID 5.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 25.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 80.000 A
Threshold Voltage VGSth min 1.4 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 6 ns
Rise Time tr 7 ns
Turn-Off Delay Time tD(off) 6 ns
Fall Time tf 1 ns
Total Gate Charge (10V) Qg (10V) 9.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 3 nC
Single pulse avalanche energy Eas 4.3 mJ
Input Capacitance Ciss 406 pF
Output Capacitance Coss 147 pF
Reverse Transfer Capacitance Crss 18 pF
Reverse recovery charge Qrr 4 nC

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