DI018C03PT-Q
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI018C03PT-Q
MOSFET, PowerQFN 3x3-Dual, N+P, 30V, -18A, 30mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI018C03PT-Q
DI018C03PT-Q Dual
Type SMD
Package PowerQFN 3x3-Dual
Qualification AEC-Q compliant
Config Dual
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N+P
Drain source voltage VDS 30 V
Drain current 25°C ID -18.000 A
On-resistance 1 RDSon1 0.0300 Ω
@ ID -10 A
@ VGS -10 V
Drain current 100°C ID 17.000 A
On-resistance 2 RDSon2 0.0130 Ω
@ ID 10.000 A
@ VGS 4.5 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 10.800 W
@ TLoc
Location
Avalanche Yes
Peak drain current IDM -80.000 A
Threshold voltage VGSth min 1.0 V
VGSth max 2.5 V
Turn-on delay time tD(on) 13 ns
Rise time tr 71 ns
Turn-off delay time tD(off) 13 ns
Fall time tf 21 ns
Total gate charge (10V) Qg (10V)
Total gate charge (4.5V) Qg (4.5V) 12.0 nC
Gate-drain charge Qgd 6 nC
Single pulse avalanche energy Eas 17.8 mJ
Input capacitance Ciss 1122 pF
Output capacitance Coss 140 pF
Reverse transfer capacitance Crss 105 pF
Reverse recovery charge Qrr 1 nC

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