DI017N15PT
MOSFETs (Field Effect Transistors)

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI017N15PT
MOSFET, PowerQFN 3x3, N, 150 V, 17 A, 65 mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI017N15PT
DI017N15PT Single
Type SMD
Package PowerQFN 3x3
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 150 V
Drain current 25°C ID 17.000 A
On-resistance 1 RDSon1 0.0650
@ ID 2.000 A
@ VGS 4.5 V
Drain current 100°C ID 11.000 A
On-resistance 2 RDSon2 0.0560
@ ID 5.000 A
@ VGS 10 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 39.000 W
@ TLoc
Location
Avalanche No
Peak drain current IDM 30.000 A
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 13 ns
Rise time tr 1 ns
Turn-off delay time tD(off) 13 ns
Fall time tf 3 ns
Total gate charge (10V) Qg (10V) 12.8 nC
Total gate charge (4.5V) Qg (4.5V) 5.5 nC
Gate-drain charge Qgd 13 nC
Single pulse avalanche energy Eas 55.0 mJ
Input capacitance Ciss 618 pF
Output capacitance Coss 81 pF
Reverse transfer capacitance Crss 7 pF
Reverse recovery charge Qrr 210 nC

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