DI017N06PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI017N06PQ
MOSFET, PowerQFN 5x6, N, 60V, 17A,
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI017N06PQ
DI017N06PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 60 V
Drain Current 25°C ID 17.000 A
On-Resistance 1 RDSon1 0.0330 Ω
@ ID 15 A
@ VGS 10 V
Drain Current 100°C ID 10.000 A
On-Resistance 2 RDSon2 0.03300 Ω
@ ID 10.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 21.000 W
@ TLoc 25 °C
Location
Avalanche Avalanche No
Peak Drain Current IDM 50.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 11 ns
Rise Time tr 27 ns
Turn-Off Delay Time tD(off) 10 ns
Fall Time tf 2 ns
Total Gate Charge (10V) Qg (10V) 19.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 3 nC
Single pulse avalanche energy Eas 3.7 mJ
Input Capacitance Ciss 1260 pF
Output Capacitance Coss 47 pF
Reverse Transfer Capacitance Crss 43 pF
Reverse recovery charge Qrr

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