DI013P06PT-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI013P06PT-AQ
MOSFET, PowerQFN 3x3, P, -60V, -12.5A, 70mΩ, 175°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI013P06PT-AQ
DI013P06PT-AQ Single
Type SMD
Package PowerQFN 3x3
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS -60 V
Drain current 25°C ID -12.500 A
On-resistance 1 RDSon1 0.0700 Ω
@ ID -10 A
@ VGS -5.7 V
Drain current 100°C ID -8.800 A
On-resistance 2 RDSon2 0.0950 Ω
@ ID -4.400 A
@ VGS -4.5 V
Junction temperature Tjmin
Tjmax 175 °C
Power dissipation Ptot 25.000 W
@ TLoc 25 °C
Location
Avalanche Yes
Peak drain current IDM -36.000 A
Threshold voltage VGSth min -1.5 V
VGSth max -2.5 V
Turn-on delay time tD(on) 9 ns
Rise time tr 10 ns
Turn-off delay time tD(off) 14 ns
Fall time tf 3 ns
Total gate charge (10V) Qg (10V) 16.7 nC
Total gate charge (4.5V) Qg (4.5V) 7.6 nC
Gate-drain charge Qgd 3 nC
Single pulse avalanche energy Eas 14.0 mJ
Input capacitance Ciss 980 pF
Output capacitance Coss 50 pF
Reverse transfer capacitance Crss 16 pF
Reverse recovery charge Qrr 9 nC

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