DI010N03PW-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI010N03PW-AQ
MOSFET, PowerQFN 2x2, N, 30V, 10A, 12mΩ, 150°C, AEC-Q101
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI010N03PW-AQ
DI010N03PW-AQ Single
Type SMD
Package PowerQFN 2x2
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 30 V
Drain Current 25°C ID 10.000 A
On-Resistance 1 RDSon1 0.0120 Ω
@ ID 10 A
@ VGS 10 V
Drain Current 100°C ID
On-Resistance 2 RDSon2 0.0160 Ω
@ ID 9.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 1.400 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 50.000 A
Threshold Voltage VGSth min 1.0 V
VGSth max 2.0 V
Turn-On Delay Time tD(on) 16 ns
Rise Time tr 72 ns
Turn-Off Delay Time tD(off) 16 ns
Fall Time tf 22 ns
Total Gate Charge (10V) Qg (10V) 25.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 6 nC
Single pulse avalanche energy Eas 20.0 mJ
Input Capacitance Ciss 1120 pF
Output Capacitance Coss 150 pF
Reverse Transfer Capacitance Crss 105 pF
Reverse recovery charge Qrr 4 nC

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