DI009P06PT-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI009P06PT-AQ
MOSFET, PowerQFN 3x3, P, -60V, -9.3A, 160mΩ, 175°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI009P06PT-AQ
DI009P06PT-AQ Single
Type SMD
Package PowerQFN 3x3
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol P
Drain Source Voltage VDS -60 V
Drain Current 25°C ID 9.300 A
On-Resistance 1 RDSon1 0.16000 Ω
@ ID -5.000 A
@ VGS -10 V
Drain Current 100°C ID -5.800 A
On-Resistance 2 RDSon2 0.22000 Ω
@ ID -4.000 A
@ VGS -4.5 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 32.800 W
@ TLoc 25 °C
Location
Avalanche Yes
Peak Drain Current IDM -15.000 A
Threshold Voltage VGSth min -1.2 V
VGSth max -2.5 V
Turn-On Delay Time tD(on) 5 ns
Rise Time tr 3 ns
Turn-Off Delay Time tD(off) 8 ns
Fall Time tf 1 ns
Total Gate Charge (10V) Qg (10V) 7.0 nC
Total Gate Charge (4.5V) Qg (4.5V) 3.2 nC
Gate-Drain Charge Qgd 1 nC
Single pulse avalanche energy Eas 4.7 mJ
Input Capacitance Ciss 361 pF
Output Capacitance Coss 25 pF
Reverse Transfer Capacitance Crss 20 pF
Reverse recovery charge Qrr 3.6 nC

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