DI009N10PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI009N10PQ
MOSFET, PowerQFN 5x6, N, 100V, 9A, 0.115 Ω
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI009N10PQ
DI009N10PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 100 V
Drain Current 25°C ID 9.000 A
On-Resistance 1 RDSon1 0.1150 Ω
@ ID 4.000 A
@ VGS 10 V
Drain Current 100°C ID 6.300 A
On-Resistance 2 RDSon2 0.1250 Ω
@ ID 3.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 26.700 W
@ TLoc 25 °C
Location
Avalanche No
Peak Drain Current IDM 20.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 11 ns
Rise Time tr 3 ns
Turn-Off Delay Time tD(off) 10 ns
Fall Time tf 5 ns
Total Gate Charge (10V) Qg (10V) 19.0 nC
Total Gate Charge (4.5V) Qg (4.5V) 9.0 nC
Gate-Drain Charge Qgd 2 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 1142 pF
Output Capacitance Coss 27 pF
Reverse Transfer Capacitance Crss 24 pF
Reverse recovery charge Qrr 18 nC

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