DI008C04PT
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI008C04PT
MOSFET, PowerQFN 3x3-Dual, N+P, 40V, 8A, 18mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI008C04PT
DI008C04PT Dual
Type SMD
Package PowerQFN 3x3-Dual
Qualification Industrial Grade
Config Dual
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N+P
Drain source voltage VDS 40 V
Drain current 25°C ID 8.000 A
On-resistance 1 RDSon1 0.0180 Ω
@ ID 8 A
@ VGS 10 V
Drain current 100°C ID
On-resistance 2 RDSon2 0.0220 Ω
@ ID 4.000 A
@ VGS 4.5 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 1.770 W
@ TLoc
Location
Avalanche No
Peak drain current IDM 32.000 A
@ tp
Threshold voltage VGSth min 1.0 V
VGSth max 2.5 V
Turn-on delay time tD(on) 6 ns
Rise time tr 36 ns
Turn-off delay time tD(off) 29 ns
Fall time tf 7 ns
Total gate charge (10V) Qg (10V) 15.0 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 3 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 750 pF
Output capacitance Coss 150 pF
Reverse transfer capacitance Crss 80 pF
Reverse recovery charge Qrr 21 nC
Case flammability UL94-V0 No
Net weight mnet
Marking Marking
Thermal resistance junction RTH
Location
UL recognized UL-Recognition
Thermal resistance junction (b) RTH
Location
Storage temperature Tsmin
Tsmax
Solder & Assembly Solder & Assembly
Gate source leakage current IGSS
@ VGS
Drain source leakage current IDSS
@ VDS
Gate source voltage DC VGSS
Gate source voltage ESD VGSS
Forward transconductance gfs
Intrinsic gate resistance RGi

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