DI006N06PW-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI006N06PW-AQ
MOSFET, PowerQFN 2x2, N, 65V, 6A, 20mΩ, 150°C, AEC-Q101
Minimum order quantity 4.000
Stock 12.000
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI006N06PW-AQ
DI006N06PW-AQ Single
Type SMD
Package PowerQFN 2x2
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 65 V
Drain current 25°C ID 6.000 A
On-resistance 1 RDSon1 0.0200 Ω
@ ID 6 A
@ VGS 10 V
Drain current 100°C ID
On-resistance 2 RDSon2 0.0300 Ω
@ ID 5.000 A
@ VGS 4.5 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 1.670 W
@ TLoc
Location
Avalanche No
Peak drain current IDM 80.000 A
Threshold voltage VGSth min 1.4 V
VGSth max 2.5 V
Turn-on delay time tD(on) 9 ns
Rise time tr 23 ns
Turn-off delay time tD(off) 8 ns
Fall time tf 3 ns
Total gate charge (10V) Qg (10V) 10.0 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 3 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 403 pF
Output capacitance Coss 154 pF
Reverse transfer capacitance Crss 17 pF
Reverse recovery charge Qrr 7 nC

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