DI006N04KSQ2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI006N04KSQ2
MOSFET, SO-8, N+N, 40V, 6A, 28 mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI006N04KSQ2
DI006N04KSQ2 Dual 7/8
Type SMD
Package SO-8
Qualification Industrial Grade
Config Dual 7/8
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N+N
Drain Source Voltage VDS 40 V
Drain Current 25°C ID 6.000 A
On-Resistance 1 RDSon1 0.0280 Ω
@ ID 6.000 A
@ VGS 10 V
Drain Current 100°C ID 6.000 A
On-Resistance 2 RDSon2 0.0350 Ω
@ ID 5.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 2.000 W
@ TLoc
Location
Avalanche No
Peak Drain Current IDM 30.000 A
Threshold Voltage VGSth min 1.0 V
VGSth max 2.6 V
Turn-On Delay Time tD(on) 6 ns
Rise Time tr 3 ns
Turn-Off Delay Time tD(off) 21 ns
Fall Time tf 7 ns
Total Gate Charge (10V) Qg (10V) 13.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 2 nC
Single pulse avalanche energy Eas 10.0 mJ
Input Capacitance Ciss 520 pF
Output Capacitance Coss 65 pF
Reverse Transfer Capacitance Crss 32 pF
Reverse recovery charge Qrr 13 nC

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