DI001N65PTK-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI001N65PTK-AQ
MOSFET, PowerQFN 3x3, N, 650V, 1A, 1.6Ω, 150°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI001N65PTK-AQ
DI001N65PTK-AQ Single
Type SMD
Package PowerQFN 3x3
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive No
 
ESD protection ESD protected Yes
Polarity pol N
Drain Source Voltage VDS 650 V
Drain Current 25°C ID 1.000 A
On-Resistance 1 RDSon1 1.6000 Ω
@ ID 1 A
@ VGS 10 V
Drain Current 100°C ID 0.630 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 32.200 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 4.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 9 ns
Rise Time tr 11 ns
Turn-Off Delay Time tD(off) 19 ns
Fall Time tf 86 ns
Total Gate Charge (10V) Qg (10V) 5.8 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 2 nC
Single pulse avalanche energy Eas 19.3 mJ
Input Capacitance Ciss 209 pF
Output Capacitance Coss 12 pF
Reverse Transfer Capacitance Crss 5 pF
Reverse recovery charge Qrr 498 nC

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