DI001N60U
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI001N60U
MOSFET, SOT-89, N, 600V, 1A, 15Ω, 150°C
Minimum order quantity 1.000
Stock 1.000
Customs Tariff Number 85412900
RoHS
REACH not declarable
Lead free No
Halogen free No

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Technical data

Article number DI001N60U
DI001N60U Single
Type SMD
Package SOT-89
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS 600 V
Drain current 25°C ID 1.000 A
On-resistance 1 RDSon1 15.00000 Ω
@ ID 0.500 A
@ VGS 10 V
Drain current 100°C ID
On-resistance 2 RDSon2 0.0550 Ω
@ ID 0.000 A
@ VGS 0 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 8.000 W
@ TLoc 25 °C
Location Junction
Avalanche Yes
Peak drain current IDM 0.000 A
Threshold voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-on delay time tD(on) 3 ns
Rise time tr 16 ns
Turn-off delay time tD(off) 10 ns
Fall time tf 36 ns
Total gate charge (10V) Qg (10V) 7.8 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 1 nC
Single pulse avalanche energy Eas 3.5 mJ
Input capacitance Ciss 128 pF
Output capacitance Coss 18 pF
Reverse transfer capacitance Crss 3 pF
Reverse recovery charge Qrr 400.0 nC

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