BSS806N
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description BSS806N
MOSFET, SOT-23, N, 20V, 2.3A, 57mΩ, 150°C
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number BSS806N
BSS806N Single Protected
Type SMD
Package SOT-23
Qualification Industrial Grade
Config Single Protected
Life Cycle engineering sample
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 20 V
Drain current 25°C ID 2.300 A
On-resistance 1 RDSon1 0.05700 Ω
@ ID 2.300 A
@ VGS 2.5 V
Drain current 100°C ID
On-resistance 2 RDSon2 0.08200 Ω
@ ID 1.300 A
@ VGS 1.8 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 0.500 W
@ TLoc
Location
Avalanche No
Peak drain current IDM 15.000 A
@ tp
Threshold voltage VGSth min 1.5 V
VGSth max 2.5 V
Turn-on delay time tD(on) 8 ns
Rise time tr 10 ns
Turn-off delay time tD(off) 12 ns
Fall time tf 4 ns
Total gate charge (10V) Qg (10V)
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 2 nC
Single pulse avalanche energy Eas 10.8 mJ
Input capacitance Ciss 370 pF
Output capacitance Coss 118 pF
Reverse transfer capacitance Crss 20 pF
Reverse recovery charge Qrr 3.3 nC
Case flammability UL94-V0 No
Net weight mnet
Marking Marking
Thermal resistance junction RTH
Location
UL recognized UL-Recognition
Thermal resistance junction (b) RTH
Location
Storage temperature Tsmin
Tsmax
Solder & Assembly Solder & Assembly
Gate source leakage current IGSS
@ VGS
Drain source leakage current IDSS
@ VDS
Gate source voltage DC VGSS
Gate source voltage ESD VGSS
Forward transconductance gfs
Intrinsic gate resistance RGi

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