2N7002KPW-Q
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description 2N7002KPW-Q ESD protected Gate
MOSFET, SOT-323, N, 60V, 0.31A, 1.6Ω, 150°C
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number 2N7002KPW-Q
2N7002KPW-Q Single Protected
Type SMD
Package SOT-323
Qualification AEC-Q compliant
Config Single Protected
Life Cycle active
ESD sensitive No
MSL 1
 
ESD protection ESD protected Yes
Polarity pol N
Drain source voltage VDS 60 V
Drain current 25°C ID 0.310 A
On-resistance 1 RDSon1 1.6000 Ω
@ ID 0.500 A
@ VGS 10 V
Drain current 100°C ID
On-resistance 2 RDSon2 2.0000 Ω
@ ID 0.050 A
@ VGS 5 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 0.275 W
@ TLoc
Location
Avalanche No
Peak drain current IDM 1.200 A
Threshold voltage VGSth min 1.1 V
VGSth max 2.1 V
Turn-on delay time tD(on) 5 ns
Rise time tr 3 ns
Turn-off delay time tD(off) 4 ns
Fall time tf 15 ns
Total gate charge (10V) Qg (10V) 1.1 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 0 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 31 pF
Output capacitance Coss 11 pF
Reverse transfer capacitance Crss 8 pF
Reverse recovery charge Qrr 4 nC

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