2N7002KPW-AQ
MOSFETs (Field Effect Transistors)

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description 2N7002KPW-AQ ESD protected Gate
MOSFET, SOT-323, N, 60V, 0.31A, 1.6Ω, 150°C, AEC-Q101
Minimum order quantity 3.000
Stock 3.000
Customs Tariff Number 85412100
Origin CN
RoHS / REACH Yes

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Technical data

Article number 2N7002KPW-AQ
2N7002KPW-AQ Single Protected
Type SMD
Package SOT-323
Qualification AEC-Q101
Config Single Protected
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected Yes
Polarity pol N
Drain Source Voltage VDS 60 V
Drain Current 25°C ID 0.310 A
On-Resistance 1 RDSon1 1.6000
@ ID 0.500 A
@ VGS 10 V
Drain Current 100°C ID
On-Resistance 2 RDSon2 2.0000
@ ID 0.050 A
@ VGS 5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 0.275 W
@ TLoc
Location
Avalanche Avalanche No
Peak Drain Current IDM 1.200 A
Threshold Voltage VGSth min 1.1 V
VGSth max 2.1 V
Turn-On Delay Time tD(on) 5 ns
Rise Time tr 3 ns
Turn-Off Delay Time tD(off) 4 ns
Fall Time tf 15 ns
Total Gate Charge (10V) Qg (10V) 1.1 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 0 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 31 pF
Output Capacitance Coss 11 pF
Reverse Transfer Capacitance Crss 8 pF
Reverse recovery charge Qrr 4 nC

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