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40 A/30 V Power MOSFET On Just 3.3 x 3.3 mm² DI040N03PT-AQ: Low Rds(on) in Tiny QFN3x3 Package with AEC-Q101 Qualification

Power MOSFET

The DI040N03PT-AQ comes in the tiny QFN3x3, a so called "leadless" power package where the connections are almost all "hidden" on the bottom side of the device. As such the board space requirement is no more than 3.3 x 3.3 mm². The low Rds(on) of this Power MOSFET device of typically 6 mOhm allows for a Drain current of up to 40 A at 25°C case temperature. Drain-Source voltage can be up to 30 V, with a single pulse avalanche capability of 100 mJ. Parts are not only suited for DC operation, but due to their low turn-on and -off characteristics also for high frequency switching. Typical applications are USB charger, power management units, battery powered devices, load switches and polarity protection. Beside the AEC-Q101 qualified part DI040N03PT-AQ also the commercial grade version DI040N03PT can be ordered. Samples are available from stock.

 

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