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DI0A35N06PGK Miniature by Design. Mighty by Performance.

Diotec expands its MOSFET portfolio with the DI0A35N06PGK, a 60 V, 350 mA N-channel logic-level MOSFET in the ultra-compact DFN1006-3 package. Designed for next-generation industrial electronics, this device delivers efficient switching performance while occupying just a fraction of the PCB area required by conventional packages.

Optimized for direct drive from modern microcontrollers and low-voltage logic circuits, the DI0A35N06PGK offers fast switching, low gate drive requirements, and high efficiency, making it an ideal choice for space-constrained designs where performance and reliability are equally important.

Typical applications include industrial automation equipment, PLC I/O modules, sensor interfaces, electronic load switching, power management circuits, battery-powered industrial devices, and low-power actuator control. Its miniature footprint enables engineers to increase functionality, reduce board size, and meet the growing demand for compact, high-density electronic systems.

With the DI0A35N06PGK, designers no longer need to compromise between size and performance, bringing reliable 60 V logic-level switching to applications where every millimeter counts.

Features

  • Ultra-compact DFN1006-3 package
  • Fast switching times
  • Low gate charge
  • Logic level switching
  • Integrated gate ESD protection
  • RoHS and REACH compliant
  • Reliable operation

 

Applications

  • Industrial automation and control systems
  • Power management units
  • Electronic load switches
  • Battery-powered equipment
  • Polarity protection circuits
  • PLC I/O modules
  • Sensor interfaces
  • Low-power actuator and relay drivers
  • Portable and space-constrained electronics

 

Specifications

  • 350 mA continuous drain current (ID)
  • 60 V drain source voltage (VDS)
  • 1.2 A of peak drain current (IDM)
  • Junction temperature of -55°C to 150°C (Tj)
  • 0.5V to 1V gate source threshold voltage(VGS(th))
  • Gate source on state resistance < 1.4Ω at VGS = 10V (RDS(on)(max))
  • Typical gate charge of 1.9nC (Qg)
  • DFN1006-3 case outline

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