SiC MOSFETs
High Speed High Voltage (Power) Switch

Artikelnummer	Typ	Gehäuse	Qualification	Config	Life Cycle	pol Polarität	ID [A] Drain Current 25°C	ID [A] Drain Current 100°C	VDS [V] Drain-Source-Spannung	RDSon1 [Ω] On-Resistance 1	@ ID [A] On-Resistance 1	@ VGS [V] On-Resistance 1	Tjmax [°C] Sperrschicht Temperatur	Ptot [W] Verlustleistung	@ TLoc [°C] Verlustleistung	Location Verlustleistung	IDM [A] Drain-Spitzenstrom	VGSth min [V] Schwellspannung	VGSth max [V] Schwellspannung	tr [ns] Anstiegszeit	tf [ns] Abfallzeit	Etotal [mJ] Total Switching Energy	ESD protected ESD protection	RDSon2 [Ω] On-Resistance 2	@ ID [A] On-Resistance 2	@ VGS [V] On-Resistance 2	tD(on) [ns] Einschaltverzögerung	tD(off) [ns] Ausschaltverzögerung	Qg (4.5V) [nC] Total Gate Charge (4.5V)	Qg (10V) [nC] Total Gate Charge (10V)	Qgd [nC] Gate-Drain Charge	Eas [mJ] Single pulse avalanche energy	Ciss [pF] Input Capacitance	Coss [pF] Output Capacitance	Crss [pF] Reverse Transfer Capacitance	Qrr [nC] Reverse recovery charge	Avalanche Avalanche

Stand: 2026-04-01 13:10:19 UTC+2