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Introducing the SI02C065SMB - Robust Short-Circuit Protection for SiC MOSFETs
As the demand for high-efficiency, high-frequency power electronics surges, especially in electric vehicles (EVs), solar inverters, and telecommunications infrastructure, SiC MOSFETs are becoming central to next-generation designs. However, their lower Short Circuit Withstand Time (SCWT ~2 µs) compared to IGBTs (SCWT ~10 µs) demands ultra-fast protection.
Diotec Semiconductor's latest innovation is the solution.
The SI02C065SMB is a 2 A/650 V silicon carbide Schottky diode in a compact DO-214AA (SMB) package. It is specifically designed for desaturation detection circuits that protect SiC MOSFETs during short circuits.
Key features:
- 2 A average forward current (IFAV)
- 650 V repetitive reverse voltage (VRRM)
- Maximum forward voltage 1.6 V at 2 A 25°C (VF)
- Maximum reverse leakage 50 µA at 650 V and 25°C (IR)
- Total capacitive charge 5 nC at 400 V, 2 A, -200 A/µs [QC)
- DO-214AA case outline
Ideal applications:
- Automotive auxiliary power modules
- Solar inverters
- Telecom power supplies
With its low switching losses and high reverse voltage tolerance, the SI02C065SMB is the preferred choice for robust, high-speed protection in modern silicon carbide (SiC)-based systems.