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- SB350 Schottky, DO-201, 50V, 3A, 150°C
- DI350N10D2 MOSFET, D2PAK, N, 100V, 350A, 2mΩ, 175°C
- KBPC3502FP Bridge, 1-ph, KBPC, 200V, 35A, 150°C
- KBPC3502WP Bridge, 1-ph, KBPC, 200V, 35A, 150°C
- 1N5350B Zener, DO-201, 13V, 5W, ±5%
- DI350N10D2-AQ MOSFET, D2PAK, N, 100V, 350A, 2mΩ, 175°C, AEC-Q101
- 1.5SMC350 TVS, SMC, 284V, 1500W, Unidir
- P6SMB350CA TVS, SMB, 150°C, 600W, 300V, Bidir
- F5K120 Diode, Fast, DO-201, 120V, 5A, 350ns, 175°C
- DBI25-08A Bridge, 3-ph, DBI, 800V, 25A, 175°C
- F11K120 Diode, Fast, D5.4x7.5, 120V, 11A, 350ns, 150°C
- LDI92-05EN VR, SOT-23-5, 7V, 4.95V, 5.05V, 125°C, 0.001mA
- LDI92-1.2EN VR, SOT-23-5, 7V, 1.188V, 1.212V, 125°C, 0.001mA
- LDI92-3.3EN VR, SOT-23-5, 7V, 3.27V, 3.33V, 125°C, 0.001mA
- DIW030F135 IGBT, TO-247-3L, N-Fast, 1350 V, 30 A
- DIW040F135 IGBT, TO-247-3L, N-Fast, 1350 V, 40 A
- LDI559-05EN VR, SOT-23-5, 18V, 4.9V, 5.1V, 125°C, 0.005mA
- LDI8119-05EN VR, SOT-23-5, 18V, 4.9V, 5.1V, 125°C, 0.004mA
- MMFTP5618 MOSFET, SOT-23, P, -60V, -1.25A, 0.17Ω, 150°C
- MMFTP5618-AQ MOSFET, SOT-23, P, -60V, -1.25A, 0.17Ω, 150°C, AEC-Q101
- SI-A3000 HV Diode, D55x23, 8000V, 2.5A
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结果 2561 - 2570 of 2615 含有 350/2 (0.056 秒)
Kabellose Ladestation für Handy, Smartwatch und Kopfhörer – der Power-MOSFET DI048N04PT macht's möglich
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