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- SBT1045-3G Schottky, TO-220AC, 45V, 10A, 150°C
- 30CTQ045S Schottky, D2PAK, 45V, 30A, 175°C
- DI330N04D7 MOSFET, D2PAK-6L, N, 40V, 330A, 0.8mΩ, 175°C
- DIT195N08 MOSFET, TO-220AB, N, 85V, 195A, 3.5mΩ, 175°C
- MBR10100 Schottky, TO-220AC, 100V, 10A, 175°C
- MBR30150CT Schottky, TO-220AB, 150V, 30A, 175°C
- MBRS20200CT Schottky, D2PAK, 200V, 20A, 175°C
- MUR860 Diode, Superfast, TO-220AC, 600V, 8A, 50ns, 175°C
- SBCT2045 Schottky, TO-220AB, 45V, 20A, 150°C
- SK1045D2-3G Schottky, D2PAK, 45V, 10A, 150°C
- SK1545YD2-3G Schottky, D2PAK, 45V, 15A, 150°C
- SK2045CD2-3G Schottky, D2PAK, 45V, 20A, 150°C
- SK3045CD2-3G Schottky, D2PAK, 45V, 30A, 150°C
- SK3060CD2 Schottky, D2PAK, 60V, 30A, 150°C
- BZX84C12 Zener, SOT-23, 12V, 0.3W, ±5%
- DI015N25D1 MOSFET, DPAK, N, 250V, 15A, 0.2Ω, 175°C
- DI017N10D1 MOSFET, DPAK, N, 100V, 17A, 105Ω, 175°C
- DI020N06D1 MOSFET, DPAK, N, 60V, 20A, 24mΩ, 175°C
- DI022P06D1 MOSFET, DPAK, P, -60V, -22A, 45mΩ, 150°C
- DI050N06D1 MOSFET, DPAK, N, 60V, 50A, 8.5mΩ, 150°C
- DI100N04D1-AQ MOSFET, DPAK, N, 40V, 100A, 4mΩ, 175°C, AEC-Q101
- DI200N10D2 MOSFET, D2PAK, N, 100V, 200A, 2.3mΩ, 175°C
- DI7A5N65D2K MOSFET, D2PAK, N, 650V, 7.5A, 0.43Ω, 150°C
- S15AYD2 Diode, D2PAK, 50V, 15A, 150°C
- S15KYD2 Diode, D2PAK, 800V, 15A, 150°C
- S15MYD2 Diode, D2PAK, 1000V, 15A, 150°C
- SK10100D2 Schottky, D2PAK, 100V, 10A, 150°C
- SK1060D1 Schottky, DPAK, 60V, 10A, 150°C
- SK20100CD2 Schottky, D2PAK, 100V, 20A, 150°C
- SK20100CD2-AQ Schottky, D2PAK, 100V, 20A, 150°C, AEC-Q101
- SK2040YD2 Schottky, D2PAK, 40V, 20A, 150°C
- ZPD10 Zener, DO-35, 10V, 0.5W, ±5%
- ZPD12 Zener, DO-35, 12V, 0.5W, ±5%
- ZPD20 Zener, DO-35, 20V, 0.5W, ±5%
- ZPD24 Zener, DO-35, 24V, 0.5W, ±5%
- ZPD5.1 Zener, DO-35, 5.1V, 0.5W, ±5%
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结果 1321 - 1330 of 2284 含有 достижения уровня TRL 3 в рамках реализации договора гранта
Neue und aktualisierte Datenblätter 2025-07-25
DI78L00DAB, DIT220N04, DIW040S120, DIW170SIC750, ER3ASMB, LDI559EN, LDI8119EN, LDI8233EN, RB751V40GW, S1A … , DIW170SIC750, ER3ASMB, LDI559EN, LDI8119EN, LDI8233EN, RB751V40GW, S1A, SK30100PQ, SK3H10SMB data … LDI559EN, LDI8119EN, LDI8233EN, RB751V40GW, S1A, SK30100PQ, SK3H10SMB data sheets … ,
New and updated datasheets 2025-08-22
2025-08-22 New: 2CL2FL, BAT54DW, DI025N06BPT, DI048N03PTK, MM1Z4684GW Updated: B40C500033, DI009N10PQ, … , DI025N06BPT, DI048N03PTK, MM1Z4684GW Updated: B40C500033, DI009N10PQ, DIT005N60, MMFTC6420, MMFTN2362, … : B40C500033, DI009N10PQ, DIT005N60, MMFTC6420, MMFTN2362, MMFTP5618, MMS3Z2B4GW,
Neue und aktualisierte Datenblätter 2025-08-22
2025-08-22 Neu: 2CL2FL, BAT54DW, DI025N06BPT, DI048N03PTK, MM1Z4684GW Aktualisiert: B40C500033, DI009N10PQ … , DI048N03PTK, MM1Z4684GW Aktualisiert: B40C500033, DI009N10PQ, DIT005N60, MMFTC6420, MMFTN2362, … : B40C500033, DI009N10PQ, DIT005N60, MMFTC6420, MMFTN2362, MMFTP5618, MMS3Z2B4GW, PPS1020,
New and updated datasheets 2025-08-29
and updated datasheets 2025-08-29 New: BCV47, DI014N03SQ, DIT300N04, ESD9BL0525P Updated: BAS70, BAV19WS … datasheets 2025-08-29 New: BCV47, DI014N03SQ, DIT300N04, ESD9BL0525P Updated: BAS70, BAV19WS, … , BAV19WS, DI005F060D1, DI009N10PQ, DIW075M065, ESD3Z24GW, ESD9BL0521P, LDI51EN, LDI559EN,
Neue und aktualisierte Datenblätter 2025-08-29
Datenblätter 2025-08-29 Neu: BCV47, DI014N03SQ, DIT300N04, ESD9BL0525P Aktualisiert: BAS70, … Datenblätter 2025-08-29 Neu: BCV47, DI014N03SQ, DIT300N04, ESD9BL0525P Aktualisiert: BAS70, BAV19WS, … , BAV19WS, DI005F060D1, DI009N10PQ, DIW075M065, ESD3Z24GW, ESD9BL0521P, LDI51EN, LDI559EN, NUP2105AL,
Diodes à la Carte: The BAV99 in Different Varieties
The industrial grade BAV99, having 85 V / 1 µA / 350 mW * The AEC-Q101 qualified BAV99-AQ, again with … 85 V / 1 µA / 350 mW * The "high end" voltage version BAV99L, with … 100 V / 1 µA / 350 mW * The "low leakage" varieties BAV199 and … BAV199-AQ, offering 85 V / 5 nA / 350 mW Any wishes still
Packaging - Taping of axial devices
。所有印字极性方向一致。作为标准包装方式，轴向产品都是以军用包装运输。对于特殊包装，可按要求使用13号卷盘并在产品之间使用纸质保护性夹层。SMD型号根据不同产品提供7”或13“卷盘包装。 … KiB Packaging and Storage, 下载2_packaging.pdf, 下载3_storage-conditions-general.pdf
Model Railways Performing Almost Close to Reality
on the smallest scale. The MYS80 measures just 3 mm x 3 mm and offers anyway an output current of … V and t_rr < 50 ns. Two MOSFETs in a single SOT-363 package allow to build a halfbridge at … V and t_rr < 50 ns. Two MOSFETs in a single SOT-363 package allow to build a halfbridge at smallest
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Diotec Semiconductor AG Kreuzmattenstrasse 4 79423 Heitersheim Germany Telefon +49 7634 5266-0 … 4 79423 Heitersheim Germany Telefon +49 7634 5266-0 Telefax +49 7634 5266-61 mail@diotec.com
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TTDSG. This consent can be revoked at any time. 3. General information and mandatory information … Diotec Semiconductor AG Kreuzmattenstrasse 4 79423 Heitersheim Phone: +49 7634 5266-0 E-mail: mail@ … is: Diotec Semiconductor AG Kreuzmattenstrasse 4 79423 Heitersheim Phone: +49 7634 5266-0 E-mail: