DI8A6C03SQ
MOSFETs (Field Effect Transistors)
Product information
| Product family | MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection |
|---|---|
| Article description |
DI8A6C03SQ
Complementary MOSFET
MOSFET, SO-8, N+P, 30V, 8.6A, 17mΩ, 150°C |
| Minimum order quantity | 4.000 |
| Stock | 0 |
| Customs Tariff Number | 85412900 |
| RoHS | compliant |
| REACH | not declarable |
| Lead free | Yes |
| Halogen free | Yes |
Downloads & Links
Technical data
| Article number | DI8A6C03SQ | |
|---|---|---|
|
||
| Type | SMD | |
| Package | SO-8 | |
| Qualification | Industrial Grade | |
| Config | Dual | |
| Life Cycle | engineering sample | |
| ESD sensitive | No | |
| MSL | 3 | |
| ESD protected | No | |
| pol | N+P | |
| VDS | 30 V | |
| ID | 8.600 A | |
| RDSon1 | 0.0170 Ω | |
| @ ID | 8.600 A | |
| @ VGS | 10 V | |
| ID | ||
| RDSon2 | 0.0200 Ω | |
| @ ID | 7.300 A | |
| @ VGS | 4.5 V | |
| Tjmin | ||
| Tjmax | 150 °C | |
| Ptot | 1.600 W | |
| @ TLoc | ||
| Location | ||
| Avalanche | No | |
| IDM | 20.000 A | |
| VGSth min | 1.0 V | |
| VGSth max | 3.0 V | |
| tD(on) | 7 ns | |
| tr | 3 ns | |
| tD(off) | 19 ns | |
| tf | 3 ns | |
| Qg (10V) | 17.0 nC | |
| Qg (4.5V) | ||
| Qgd | 3 nC | |
| Eas | ||
| Ciss | 905 pF | |
| Coss | 180 pF | |
| Crss | 110 pF | |
| Qrr | ||
News and Updates
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