DI6A7P02SQ
MOSFETs (Field Effect Transistors)
Product information
| Product family | MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection |
|---|---|
| Article description |
DI6A7P02SQ
MOSFET, SO-8, P, 20V, 6.7A, 40mΩ, 150°C |
| Minimum order quantity | 4.000 |
| Stock | 0 |
| Customs Tariff Number | 85412900 |
| RoHS | compliant |
| REACH | not declarable |
| Lead free | Yes |
| Halogen free | Yes |
Downloads & Links
Technical data
| Article number | DI6A7P02SQ | |
|---|---|---|
|
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| Type | SMD | |
| Package | SO-8 | |
| Qualification | Industrial Grade | |
| Config | Single | |
| Life Cycle | engineering sample | |
| ESD sensitive | No | |
| MSL | 3 | |
| ESD protected | No | |
| pol | P | |
| VDS | 20 V | |
| ID | 6.700 A | |
| RDSon1 | 0.0400 Ω | |
| @ ID | 3.200 A | |
| @ VGS | 5 V | |
| ID | ||
| RDSon2 | 0.0600 Ω | |
| @ ID | -2.700 A | |
| @ VGS | -2.7 V | |
| Tjmax | 150 °C | |
| Ptot | 2.500 W | |
| @ TLoc | ||
| Location | ||
| Avalanche | No | |
| IDM | 27.000 A | |
| VGSth min | -0.6 V | |
| VGSth max | 0.0 V | |
| tD(on) | 14 ns | |
| tr | 32 ns | |
| tD(off) | 100 ns | |
| tf | 65 ns | |
| Qg (10V) | 8.5 nC | |
| Qg (4.5V) | ||
| Qgd | 2 nC | |
| Eas | ||
| Ciss | 1500 pF | |
| Coss | 730 pF | |
| Crss | 340 pF | |
| Qrr | 71 nC | |
News and Updates
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Application Reference Diagrams
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