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SiC MOSFET in D2PAK-7L with 750 V and max. RDS(on) 55 mΩ.

Diotec’s newly introduced SiC MOSFET, DI075SIC055D7, is a strong candidate for 400 V E-Fuse applications where delivering fast fault interruption, ultra-low conduction losses and robust high-voltage reliability within a compact solution are required. With its 750 V drain-source breakdown voltage rating, the device provides a comfortable safety margin for 400 V DC bus systems, ensuring robust performance against voltage transients, switching spikes and fault-induced overstress. Its low 55 mΩ RDS(on) enables a reduction in conduction losses directly boosting the overall system efficiency while reducing self-heating during steady state operation. Housed in a D2PAK-7L package, it allows a compact surface-mount solution, improving the scalability in an automated manufacturing processes whilst simultaneously enhancing electrical performance and practical thermal handling for high-voltage power designs. Complementing these features, the 214 W power rating and 175 °C maximum junction temperature delivers substantial thermal headroom, providing critical design flexibility in space-constrained applications where cooling infrastructure is inherently limited. Ultimately, the DI075SIC055D7 represents the core advantages of SiC technology: fast fault response, low-loss conduction, high-voltage robustness, and reliable operation in a space-efficient package built for next-generation E-Fuse protection.

Features

  • High reverse breakdown voltage
  • Advanced Planar technology
  • Low on-state resistance
  • Fast switching time with low capacitance
  • Low Gate charge
  • Low total switching energy
  • Samples available

 

Applications

  • Charging systems for electric vehicles (EV)
  • Solar inverters
  • Telecom power supplies
  • Power Factor Correction (PFC)
  • Switched-mode power supply (SMPS)
  • DC/DC converters
  • Industrial machinery
  • Motor Drive

 

Specifications

  • 750 V drain-source voltage (VDSS)
  • Maximum 55 mΩ on-state resistance (RDS(on))
  • 100 µA drain-source leakage current (IDSS)
  • From to -10 V to 22 V gate-source-voltage (VGSS)
  • Recommended turn-on Gate voltage VGS(on)of 18 V
  • Recommended turn-off Gate voltage VGS(off)of -3 V
  • 214 W power dissipation (Ptot)
  • Up to 132 A peak drain current (IDM)
  • 1.1 K/W maximum thermal resistance (RthC)
  • -55°C to +175°C operating junction temperature range (Tj)
  • Industrial D2PAK-7L with kevin source contact.

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