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Keeping (H)EVs Cool Under Pressure – Cooling Pump Driven by Diotec's 65 A / 80 V Power MOSFETs DI065N08D1-AQ in D-PAK

Diotec's 65 A / 80 V Power MOSFETs DI065N08D1-AQ in D-PAK

As electric vehicles continue to evolve, the demands on their thermal management systems grow more challenging. Fast charging, high-performance powertrains, and multi-motor configurations all generate significant heat that must be effectively controlled to ensure efficiency and longevity. A crucial component in this process is the coolant pump – driven by a brushless DC (BLDC) motor, delivering 120 W to 300 W in 12 V to 48 V systems.

At the heart of these BLDC motor drives is the power stage, where efficiency, reliability, and robustness matter most. This is where the DI065N08D1-AQ from Diotec Semiconductor excels.

Designed for Demanding Automotive Environments
The DI065N08D1-AQ is a 65 A / 80 V Power MOSFET, packaged in a compact TO-252AA (D-PAK), specifically developed for high-performance automotive applications such as coolant pumps, fan drives, battery management systems, and DC-DC converters.

With a typical RDS(on) of just 5.5 mΩ, low gate charge, and logic-level gate drive, this MOSFET offers excellent efficiency and fast switching behavior—ideal for modern motor control strategies. Its 175°C maximum junction temperature rating and avalanche robustness ensure long-term reliability, even under harsh thermal and electrical stress.

Key Features:

  • Logic-level gate drive for simplified control
  • Very low on-state resistance for high efficiency
  • Fast switching times for optimized motor control
  • Low gate charge to minimize driver power losses
  • Excellent thermal performance
  • Avalanche rated for rugged, real-world operation

Applications:

  • BLDC Motor Controllers (e.g., EV coolant pumps and auxiliary drives)
  • Battery Management Systems (BMS)
  • DC-DC Converters
  • Switching Power Supplies
  • General high-efficiency switching applications

Technical Specifications (Highlights): 

  • 80 V drain-source voltage (VDSS)
  • 65 A continuous drain current (ID)
  • Typical 5.5 mΩ on-state resistance (RDS(on))
  • 1 µA drain-source leakage current (IDSS)
  • 62.5 W power dissipation (Ptot)
  • 300 A peak drain current (IDM)
  • 52 A continuous body-diode current (IS)
  • 100 A peak body-diode current (ISM)
  • 25.6 mJ single pulse avalanche energy (EAS)
  • < 2.4 K/W thermal resistance junction to case (RthC)
  • -55°C to +175°C maximum operating junction temperature range (Tj)

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